document number: 88904 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated ultrafast rectifier egf1t vishay general semiconductor new product features ? superectifier structure for high reliability condition ? cavity-free glass- passivated junction ? ideal for automated placement ? ultrafast reverse recovery time ? low switching losses, high efficiency ? avalanche surge energy capability ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-std-020, lf maximum peak of 250 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high voltage rectification of photoflash application. mechanical data case: do-214ba, molded plastic over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 1300 v i fsm 20 a t rr 75 ns e as 15 mj t j max. 150 c do-214ba (gf1) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol egf1t unit device marking code et maximum repetitive pe ak reverse voltage v rrm 1300 v maximum rms voltage v rms 910 v maximum dc blocking v dc 1300 v maximum average forward rectified current i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 20 a non-repetitive avalanche energy at t a = 25 c, i as = 1 a, l = 30 mh e as 15 mj operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88904 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 egf1t vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) thermal resistance from junction to ambient and from junction to lead, pcb mounted on 0.95" x 0.95" (24 mm x 24 mm) copper pad areas note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - maximum no n-repetitive forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol egf1t unit maximum instantaneous forward voltage 1.0 a t j = 25 c v f (1) 3.0 v maximum dc reverse current v rm t j = 25 c i r (2) 5.0 a t j = 125 c 50 typical reverse recovery time i f = 0.5 a, i r =1.0 a, i rr = 0.25 a t rr 75 ns typical junction capacitance 4.0 v, 1 mhz c j 8.0 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol egf1t unit typical thermal resistance r ? ja (1) 50 c/w r ? jl (1) 20 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode egf1t-e3/67a 0.104 67a 1500 7" diam eter plastic tape and reel egf1t-e3/5ca 0.104 5ca 6500 13" diameter plastic tape and reel egf1the3/67a (1) 0.104 67a 1500 7" diameter plastic tape and reel egf1the3/5ca (1) 0.104 5ca 6500 13" diameter plastic tape and reel 0 1.5 25 50 75 100 125 150 175 average forward current (a) 0.5 1.0 t l - lead temperature (c) forward surge current (a) 25 20 15 10 5 0 110 100 number of cycles
document number: 88904 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 egf1t vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical juncti on capacitance per leg fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 instantaneous forward voltage (v) instantaneous forward current (a) t j = 150 c t j = 125 c t j = 25 c 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j = 150 c t j = 125 c t j = 25 c percent of rated peak reverse voltage (%) instantaneous reverse leakage current (a) 1 10 100 0.1 1 10 100 reverse voltage (v) junction capaci tance (pf) 1 10 100 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) 0.167 (4.24) 0.187 (4.75) 0.0065 (0.17) 0.015 (0.38) 0.030 (0.76) 0.060 (1.52) 0.196 (4.98) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.118 (3.00) 0.040 (1.02) 0.066 (1.68) 0.098 (2.49) 0.108 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 (1.93) max. 0.220 (5.58) ref. 0.060 (1.52) min. mounting pad layout cathode band 0.066 (1.68) min.
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